| S2D M4G |
Taiwan Semiconductor |
5,000 |
Rectifiers 2A 200V Standard Rec overy Rectifier |
| S2D R4 |
Taiwan Semiconductor |
5,000 |
Rectifiers 2A, 200V, Standard Recovery Rectifier |
| S2D R4G |
Taiwan Semiconductor |
5,000 |
Rectifiers 2A, 200V, Standard Recovery Rectifier |
| S2D R5 |
Taiwan Semiconductor |
5,000 |
Rectifiers 2A 200V Standard Rec overy Rectifier |
| S2D R5G |
Taiwan Semiconductor |
3,387 |
Rectifiers 2A, 200V, Standard Recovery Rectifier |
| S2D-13-F |
Diodes Incorporated |
58 |
Rectifiers 200V 2A |
| S2D-18B2-0808-150-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 600 nm, Etch Depth 150 nm, Feature Width 275 nm, Size 8.0 x 8.3 mm |
| S2D-18B2-0808-150-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 600 nm, Etch Depth 150 nm, Feature Width 275 nm, Size 8.0 x 8.3 mm |
| S2D-18B2-0808-350-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 600 nm, Etch Depth 350 nm, Feature Width 275 nm, Size 8.0 x 8.3 mm |
| S2D-18B2-0808-350-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 600 nm, Etch Depth 350 nm, Feature Width 275 nm, Size 8.0 x 8.3 mm |
| S2D-18B3-0808-150-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 700 nm, Etch Depth 150 nm, Feature Width 350 nm, Size 8.0 x 8.3 mm |
| S2D-18B3-0808-150-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 700 nm, Etch Depth 150 nm, Feature Width 350 nm, Size 8.0 x 8.3 mm |
| S2D-18B3-0808-350-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 700 nm, Etch Depth 350 nm, Feature Width 350 nm, Size 8.0 x 8.3 mm |
| S2D-18B3-0808-350-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Rectangular post, Period 700 nm, Etch Depth 350 nm, Feature Width 350 nm, Size 8.0 x 8.3 mm |
| S2D-18C2-0808-150-P |
II-VI |
5,000 |
Labels and Industrial Warning Signs 2D Silicon Nanostamp: Hexagonal post, Period 600 nm, Etch Depth 150 nm, Feature Width 240 nm, Size 8.0 x 8.3 mm |
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PANJITESD Suppressors / TVS Diodes /2EL/TR/7"/HF/5K/SOD-323HE/TVS/SOD/TSM-02HW/TSM02HW-QI01/PJ///