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VS-GT100TP60N
- Mfr.Part #
- VS-GT100TP60N
- Manufacturer
- Vishay Semiconductors
- Package/Case
- -
- Datasheet
- Download
- Description
- IGBT Modules Output & SW Modules - IAP IGBT
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Configuration :
- Half Bridge
- Continuous Collector Current at 25 C :
- 160 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 175 C
- Package / Case :
- INT-A-PAK
- Pd - Power Dissipation :
- 417 W
- Datasheets
- VS-GT100TP60N
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