info@yc-chip.com
- Manufacturer :
- IXYS
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.2 V
- Configuration :
- Single Dual Emitter
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-227B-4
- Packaging :
- Tube
- Series :
- IXDN75N120
- Technology :
- SI
- Datasheets
- IXDN75N120
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Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IXDN55N120D1 | IXYS | 8 | IGBT Transistors 55 Amps 1200V |
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| IXDN602D2TR | IXYS Integrated Circuits | 5,000 | Gate Drivers 2A Low Side UF MOSFET Driver |
| IXDN602PI | IXYS Integrated Circuits | 870 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602PI | IXYS Integrated Circuits | 870 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SI | IXYS Integrated Circuits | 2,000 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SI | IXYS Integrated Circuits | 2,000 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SIA | IXYS Integrated Circuits | 17,494 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SIA | IXYS Integrated Circuits | 17,494 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SIATR | IXYS Integrated Circuits | 42,000 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SIATR | IXYS Integrated Circuits | 42,000 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SITR | IXYS Integrated Circuits | 5,000 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN602SITR | IXYS Integrated Circuits | 5,000 | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
| IXDN604PI | IXYS Integrated Circuits | 7 | Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV |
| IXDN604PI | IXYS Integrated Circuits | 7 | Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV |
