IXST30N60BD1

Mfr.Part #
IXST30N60BD1
Manufacturer
IXYS
Package/Case
-
Datasheet
Download
Description
IGBT Transistors 55 Amps 600V 2 Rds

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
IXYS
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
600 V
Configuration :
Single
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
TO-268AA-3
Packaging :
Tube
Series :
IXST30N60
Technology :
SI
Datasheets
IXST30N60BD1

Manufacturer related products

Catalog related products

  • Infineon Technologies
    IGBT Transistors HOME APPLIANCES 14
  • Infineon Technologies
    IGBT Transistors HOME APPLIANCES 14
  • ROHM Semiconductor
    IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
  • ROHM Semiconductor
    IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT
  • Infineon Technologies
    IGBT Transistors HOME APPLIANCES 14

Related products

Part Manufacturer Stock Description
IXST15N120B IXYS 5,000 IGBT Transistors 30 Amps 1200V 3.4 Rds
IXST30N60C IXYS 5,000 IGBT Transistors 55 Amps 600V 2.5 Rds